Phase random access memory with high density
US6943395B2 · kind B2 · utility
23Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 22, 2004 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Mar 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase random access memory including a plurality of access transistors, each access transistor including a drain region, and a phase-changeable film shared by the plurality of access transistors. The phase-changeable film is connected to a bitline through a first electrode and connected to each respective drain region through at least one of a plurality of second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.