Inventor · Yongin-si, KR

Du-Eung Kim

98Patents

16h-index

41Co-inventors

84Inventor score

Filing activity: Apr 18, 1994 → Sep 19, 2018

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8179711B2	Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell	Physics	109	Active
US7570511B2	Semiconductor memory device having a three-dimensional cell array structure	Physics	67	Active
US7589367B2	Layout structure in semiconductor memory device comprising global work lines, local work lines, global bit lines and local bit lines	Physics	62	Expired
US7110286B2	Phase-change memory device and method of writing a phase-change memory device	Physics	32	Expired
US6026039A	Parallel test circuit for semiconductor memory	Physics	31	Expired
US7283387B2	Phase change random access memory device having variable drive voltage circuit	Physics	29	Expired
US7639522B2	Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device	Physics	28	Active
US6943395B2	Phase random access memory with high density	Electricity	23	Expired
US7274586B2	Method for programming phase-change memory array to set state and circuit of a phase-change memory device	Physics	19	Expired
US7427531B2	Phase change memory devices employing cell diodes and methods of fabricating the same	Electricity	18	Active
US7486536B2	Phase-changeable memory device and method of programming the same	Physics	18	Expired
US7064601B2	Reference voltage generating circuit using active resistance device	Physics	18	Expired
US7304885B2	Phase change memories and/or methods of programming phase change memories using sequential reset control	Physics	17	Expired
US8081501B2	Multi-level nonvolatile memory device using variable resistive element	Physics	17	Active
US7450415B2	Phase-change memory device	Physics	16	Active
US8116117B2	Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device	Physics	16	Active
US7453716B2	Semiconductor memory device with stacked control transistors	Physics	15	Expired
US7502251B2	Phase-change memory device and method of writing a phase-change memory device	Physics	15	Active
US7457151B2	Phase change random access memory (PRAM) device having variable drive voltages	Physics	15	Expired
US7515459B2	Method of programming a memory cell array using successive pulses of increased duration	Physics	14	Active
US7227776B2	Phase change random access memory (PRAM) device	Physics	13	Expired
US7391644B2	Phase-changeable memory device and read method thereof	Physics	13	Active
US7436693B2	Phase-change semiconductor memory device and method of programming the same	Physics	12	Expired
US7573758B2	Phase-change random access memory (PRAM) performing program loop operation and method of programming the same	Physics	12	Active
US7746688B2	PRAM and method of firing memory cells	Physics	12	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.