Method for forming a GMR sensor having improved longitudinal biasing
US6944939B2 · kind B2 · utility
15Cited by
8References
10Claims
0Family size
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Key dates
| Filing date | Mar 21, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Sep 3, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A GMR sensor having improved longitudinal biasing is provided as is a method of forming it. The improved biasing is provided by longitudinal biasing structures in which a soft magnetic layer is interposed between a hard magnetic biasing layer and the lateral edge of the GMR sensor element. The soft magnetic layer eliminates the need for a seed layer directly between the hard magnetic layer and the GMR element and provides improved coupling to the free layer of the GMR element and a substantial reduction in random domain variations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.