Method of making an aligned electrode on a semiconductor structure
US6946313B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 12, 2004 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Mar 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making an electrode on a semiconductor device including depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal. The mask has an opening so that the first region is covered by the mask and a second region of the structure is aligned with the opening in the mask. Metal aligned with the opening in the mask in the second region is then removed to form a first electrode overlying the first region of the semiconductor structure, and also revealing the top surface of the semiconductor structure in the second region. Material is then removed from the semiconductor structure aligned with opening in the second region to form a second electrode surface for a second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.