Method of forming GE photodetectors
US6946318B2 · kind B2 · utility
27Cited by
12References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2004 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Sep 28, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.