Semiconductor device and method for manufacturing the same
US6946342B2 · kind B2 · utility
9Cited by
12References
41Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 2, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Jun 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.