Patent · US Expired

Method for producing a thin film comprising introduction of gaseous species

US6946365B2 · kind B2 · utility

109Cited by

11References

19Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Bernard Aspar · Voiron, FR
Michel Bruel · Saint-Égrève, FR

Key dates

Filing date	Dec 7, 2001
Grant date	Sep 20, 2005
Priority date	—
Expiry date	Apr 19, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76254
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for making a thin layer from a structure. A stacked structure is made of a first part designed to facilitate the introduction of gaseous species and of a second part, the second part having a first free face and a second face integral with the first part. A gaseous species is introduced into the structure, from the first part, to create an embrittled zone, a thin layer being thus delimited between the first face of the second part and the embrittled zone. The thin layer is separated from the remaining of the structure at the level of the embrittled zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.