Reduction of native oxide at germanium interface using hydrogen-based plasma
US6946368B1 · kind B1 · utility
7Cited by
1References
22Claims
0Family size
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Key dates
| Filing date | Mar 23, 2004 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Mar 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3003
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A germanium substrate is positioned in a process chamber. A plasma is generated from a treatment gas that includes a flow of a hydrogen-containing gas. The plasma is provided to the process chamber to react with GeO2 in the germanium substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.