Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material
US6946369B2 · kind B2 · utility
6Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Jan 8, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD). Said method comprises the following steps: The invention further concerns nanostructures formed according to one of said methods as well as devices comprising said nanostructures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.