Apparatus to decelerate and control ion beams to improve the total quality of ion implantation
US6946667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2002 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Oct 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24528
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.