Light emitting semiconductor method and device
US6946685B1 · kind B1 · utility
25Cited by
19References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Oct 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Silver electrode metallization in light emitting devices is subject to electrochemical migration in the presence of moisture and an electric field. Electrochemical migration of the silver metallization to the pn junction of the device results in an alternate shunt path across the junction, which degrades efficiency of the device. In accordance with a form of this invention, a migration barrier is provided for preventing migration of metal from at least one of the electrodes onto the surface of the semiconductor layer with which the electrode is in contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.