Semiconductor device
US6946711B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2002 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Jun 7, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device such as MOSFET, a single crystal semiconductor substrate is provided. An epitaxitial layer is formed on the single crystal semiconductor substrate. A p-well regions are formed on the epitaxitial layer, respectively, and n+ source regions are formed on the p-well regions, respectively. A gate electrode is formed through a gate insulation film on a part of each p-well region and that of each n+ source region. The gate electrode is covered with an insulation film. On the insulation film, a source electrode is formed so that the n-channel MOSFET includes body diodes BD imbedded therein. A drain electrode is formed on the single crystal semiconductor substrate. A cluster-containing layer is implanted in the single crystal semiconductor substrate as a gettering layer so that the cluster-containing layer contains a cluster of nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.