High voltage semiconductor device
US6946717B2 · kind B2 · utility
5Cited by
6References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2002 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Jan 30, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211) disposed on the substrate and electrically coupled to the active element; and an insulating layer (202) adjacent the substrate and interposed between the passive device and ground surface such that there is no resistive ground path from the passive device to the ground surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.