Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
US6946719B2 · kind B2 · utility
201Cited by
6References
85Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Mar 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention provides for a vertically oriented junction diode having a contact-antifuse unit in contact with one of its electrodes. The contact-antifuse unit is formed either above or below the junction diode, and comprises a silicide with a dielectric antifuse layer formed on and in contact with it. In preferred embodiments, the silicide is cobalt silicide, and the antifuse preferably silicon oxide, silicon nitride, or silicon oxynitride grown on the colbalt silicide. The junction diode and contact-antifuse unit can be used as a memory cell, which is advantageously used in a monolithic three dimensional memory array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.