Method of making diode having reflective layer
US6949395B2 · kind B2 · utility
63Cited by
35References
73Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 22, 2001 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Oct 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.