Manufacturing method of semiconductor device including an anisotropic etching step
US6949437B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Aug 28, 2003 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Aug 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a multilayer film which is formed on a semiconductor substrate, an opening which is opened on a base and an emitter is formed in the multilayer film, and after an SiGe/SiGeC film, which has a composition with a higher content of Si in an upper layer region and a lower layer region, and a higher content of Ge in an intermediate layer region, is formed on an entire surface, anisotropic dry etching is performed for the SiGe/SiGeC film up to a predetermined height of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.