Method for fabricating image display device
US6949452B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2003 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Jun 25, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13454
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.