Guard ring structure for a Schottky diode
US6949454B2 · kind B2 · utility
17Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2003 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Jan 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky device having a substrate layer of a first conductivity type having a surface, and a guard ring formed over the surface of the substrate layer and also surrounding a barrier region of the substrate layer. The guard ring has a gate of a second conductivity type disposed over a dielectric layer. A metal can be formed over the barrier region to form a Schottky junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.