Self-aligned contact areas for sidewall image transfer formed conductors
US6949458B2 · kind B2 · utility
6Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2003 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Feb 10, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for forming a sidewall image transfer conductor having a contact pad includes forming an insulator to include a recess, depositing a conductor around the insulator, and etching the conductor to form the sidewall image transfer conductor, wherein the conductor remains in the recess and forms the contact pad and the recess is perpendicular to the sidewall image transfer conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.