Patent · US Expired

Self-aligned contact areas for sidewall image transfer formed conductors

US6949458B2 · kind B2 · utility

6Cited by
15References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 10, 2003
Grant dateSep 27, 2005
Priority date
Expiry dateFeb 10, 2023

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49165
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method and structure for forming a sidewall image transfer conductor having a contact pad includes forming an insulator to include a recess, depositing a conductor around the insulator, and etching the conductor to form the sidewall image transfer conductor, wherein the conductor remains in the recess and forms the contact pad and the recess is perpendicular to the sidewall image transfer conductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.