CMP apparatus and method for polishing multiple semiconductor wafers on a single polishing pad using multiple slurry delivery lines
US6949466B2 · kind B2 · utility
8Cited by
10References
25Claims
0Family size
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Key dates
| Filing date | Sep 18, 2001 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Dec 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical mechanical polishing (CMP) apparatus and method for sequentially polishing multiple semiconductor wafers on a single polishing pad utilizes multiple slurry delivery lines to supply one or more types of polishing solutions to the surface of the polishing pad. The slurry delivery lines are positioned to direct the polishing solution or solutions to different polishing positions of the polishing pad. The use of multiple slurry delivery lines allows the CMP apparatus to polish the semiconductor wafers at different polishing positions of the polishing pad using different types of polishing solutions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.