Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure

US6949812B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Reinhard Losehand
• Hubert Werthmann · Birkenfeld, DE

Key dates

• Filing date: Sep 24, 2002
• Grant date: Sep 27, 2005
• Expiry date: Sep 24, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. The buffer layer is made of an undoped material and is disposed on a top side of the well for inhibiting an outdiffusion of a dopant from the well. At least a portion of the substrate is not covered by the buffer layer.