Nonvolatile semiconductor storage device
US6950347B2 · kind B2 · utility
7Cited by
3References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 11, 2002 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Jan 11, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3436
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.