Copper transition layer for improving copper interconnection reliability
US6951812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Oct 4, 2005 |
| Priority date | — |
| Expiry date | Dec 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The structure and the fabrication method of an integrated circuit in the horizontal surface of a semiconductor body comprising a dielectric layer over said semiconductor body and a substantially vertical hole through the dielectric layer, the hole having sidewalls and a bottom. A barrier layer is positioned over the dielectric layer including the sidewalls within the hole and the bottom of the hole; the barrier layer is operable to seal copper. A copper-doped transition layer is positioned over the barrier layer; the transition layer has a resistivity higher than pure copper and is operable to strongly bond to copper and to the barrier layer, whereby electomigration reliability is improved. The remainder of said hole is filled with copper. The hole can be either a trench or a trench and a via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.