Plasma ashing process
US6951823B2 · kind B2 · utility
18Cited by
20References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2003 |
| Grant date | Oct 4, 2005 |
| Priority date | — |
| Expiry date | Nov 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3342
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.