High-density three-dimensional memory cell
US6952030B2 · kind B2 · utility
240Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 2004 |
| Grant date | Oct 4, 2005 |
| Priority date | — |
| Expiry date | May 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three dimensional monolithic memory comprising a memory cell allowing for increased density is disclosed. In the memory cell of the present invention, a bottom conductor preferably comprising tungsten is formed. Above the bottom conductor a semiconductor element preferably comprises two diode portions and an antifuse. Above the semiconductor element are additional conductors and semiconductor elements in multiple stones of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.