Metal bond pad for integrated circuits allowing improved probing ability of small pads
US6952053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Oct 4, 2005 |
| Priority date | — |
| Expiry date | Jun 24, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a metal bond pad that provides electrical and mechanical connection to an integrated circuit (IC). The metal bond pad is configured to accommodate for probe travel during probing measurements, without modifying the size of the passivation opening of the bond pad. This enables higher density of active devices on the IC and therefore increases integration and lowers IC cost. The metal bond pad for the integrated circuit includes a substrate, a first metal layer, and a second metal layer. The substrate has the first metal layer disposed therein, having an opening from the top surface of the substrate. The second metal layer has a first-end portion, a second-end portion and a center portion disposed between the first-end portion and the second-end portion. The center portion of the second metal layer is aligned with the opening in the substrate and a bottom surface of the center portion is in contact with the top surface of the first metal layer. A top surface of the center portion has a recessed region that forms a first edge with said first-end portion and a second edge with said second-end portion. The first-end portion of the second metal layer is disposed …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.