Liming Tsau
21Patents
7h-index
29Co-inventors
69Inventor score
Filing activity: Dec 31, 1998 → May 13, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6417094B1 | Dual-damascene interconnect structures and methods of fabricating same | Electricity | 63 | Expired |
| US7329955B2 | Metal-insulator-metal (MIM) capacitor | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7187015B2 | High-density metal capacitor using dual-damascene copper interconnect | Electricity | 11 | Expired |
| US6960819B2 | System and method for one-time programmed memory through direct-tunneling oxide breakdown | Electricity | 11 | Expired |
| US6833604B2 | High density metal capacitor using dual-damascene copper interconnect | Electricity | 11 | Expired |
| US6803306B2 | High density metal capacitor using via etch stopping layer as field dielectric in dual-damascence interconnect process | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6985387B2 | System and method for one-time programmed memory through direct-tunneling oxide breakdown | Electricity | 9 | Expired |
| US9741667B2 | Integrated circuit with die edge assurance structure | Electricity | 5 | Active |
| US6902972B2 | High-density metal capacitor using dual-damascene copper interconnect | Electricity | 4 | Expired |
| US6952053B2 | Metal bond pad for integrated circuits allowing improved probing ability of small pads | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6950355B2 | System and method to screen defect related reliability failures in CMOS SRAMS | Physics | 2 | Expired |
| US7009891B2 | System and method for one-time programmed memory through direct-tunneling oxide breakdown | Electricity | 1 | Expired |
| US10629504B2 | Die edge crack and delamination detection | Electricity | 0 | Active |
| US12068232B2 | Integrated circuit package with serpentine conductor and method of making | Electricity | 0 | Active |
| US12191243B2 | Cantilevered power planes to provide a return current path for high-speed signals | Electricity | 0 | Active |
| US7049204B2 | High density metal capacitor using via etch stopping layer as field dielectric in dual-damascence interconnect process | Emerging Cross-Sectional Technologies | 0 | Expired |
| US8106476B2 | Semiconductor die with fuse window and a monitoring window over a structure which indicates fuse integrity | Electricity | 0 | Active |
| US12216153B2 | Semiconductor product with edge integrity detection structure | Electricity | 0 | Active |
| US11049829B2 | Redistribution metal and under bump metal interconnect structures and method | Electricity | 0 | Active |
| US10504862B2 | Redistribution metal and under bump metal interconnect structures and method | Electricity | 0 | Active |
| US11906802B2 | Photonics integration in semiconductor packages | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.