Manufacture method of semiconductor device with gate insulating films of different thickness
US6953727B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 21, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Aug 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
A method of manufacturing a semiconductor device, having the steps of: (a) forming a first gate insulating film having a first thickness in a plurality of regions on a surface of a semiconductor substrate; (b) removing the first gate insulating film in a first region among the plurality of regions and allowing a native oxide film to be formed; (c) heating the semiconductor substrate in a reducing atmosphere and selectively reducing and removing the native oxide film formed in the step (b); and (d) after the step (c), forming a second gate insulating film having a second thickness thinner than the first thickness on the surface of the semiconductor substrate in the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.