Methods of fabricating contacts for semiconductor devices utilizing a pre-flow process
US6953741B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Oct 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76886
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating a contact of a semiconductor device are provided by patterning an interlayer dielectric of the semiconductor device to form a contact hole that exposes a silicon-based region of a first impurity type. The exposed silicon-based region is doped with a gas containing an element of the first impurity type and a contact plug is formed in the contact hole. Contact structure for a semiconductor device are also provided that include an interlayer dielectric of the semiconductor device having a contact hole formed therein that exposes a silicon-based region of a first impurity type. A delta-doped region of the first impurity type is provided in the exposed silicon-based region. A contact plug is provided in the contact hole and on the delta-doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.