Method of screening defects using low voltage IDDQ measurement
US6954705B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Dec 29, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/3008
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of screening defects includes steps of: (a) measuring a quiescent current at a first supply voltage for each of a plurality of devices; (b) measuring a quiescent current at a second supply voltage for each of the plurality of devices; (c) generating a plot of the quiescent current measured at the first supply voltage vs. the quiescent current measured at the second supply voltage for each of the plurality of devices; (d) determining a range of intrinsic variation of quiescent current in the plot; and (e) identifying any of the plurality of devices corresponding to a measurement plotted outside the range of intrinsic variation as defective.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.