Patent · US Expired

Method for defining a minimum pitch in an integrated circuit beyond photolithographic resolution

US6955961B1 · kind B1 · utility

196Cited by
4References
63Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 27, 2004
Grant dateOct 18, 2005
Priority date
Expiry dateMay 29, 2024

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/947
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for defining a minimum pitch in an integrated circuit beyond photolithographic resolution controls the defined pitches of the target layer by use of polymer spacer, photo-insensitive polymer plug and polymer mask during the process, so as to achieve the minimum pitch of the target layer beyond photolithographic resolution. Applied to memory manufacture, this method is capable of simultaneously overcoming the process difficulty of significant difference between polysilicon pitches in memory array region and periphery region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.