Method of manufacturing semiconductor device and method of manufacturing optical wave guide
US6955994B2 · kind B2 · utility
2Cited by
5References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | May 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34373
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device, including the steps of (a) rowing an InP layer on a surface of starting growth, resulting in the InP layer having a convex structure, and (b) wet etching the InP layer by an enchant including hydrochloric acid and acetic acid, and thereby flattening a surface of the InP layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.