Trenched semiconductor devices and their manufacture
US6956264B2 · kind B2 · utility
3Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Dec 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In semiconductor devices which include an insulated trench electrode (11) in a trench (20), for example, trench-gate field effect power transistors and trenched Schottky diodes, a cavity (23) is provided between the bottom (25) of the trench electrode (11) and the bottom (27) of the trench (20) to reduce the dielectric coupling between the trench electrode (11) and the body portion at the bottom (27) of the trench in a compact manner. In power transistors, the reduction in dielectric coupling reduces switching power losses, and in Schottky diodes, it enables the trench width to be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.