Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
US6958092B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2003 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | Sep 1, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249978
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer. In addition, the front surface of the wafer has an epitaxial layer, having a thickness of less than about 2.0 çm, deposited thereon. A process comprises heating a surface of a wafer starting material to remove a silicon oxide layer from the surface and depositing an epitaxial layer onto the surface to form an epitaxial wafer. The epitaxial wafer is then heated to a soak temperature of at least about 1175C. while exposing the epitaxial layer to an oxidizing atmosphere comprising an oxidant, and the wafer is cooled at a rate of at least about 10C./sec.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.