Free-standing (Al, Ga, In)N and parting method for forming same
US6958093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2001 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | Mar 9, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a free-standing (Al, Ga, In)N article, by the steps including: providing an expitaxially compatible sacrificial template; depositing single crystal (Al, Ga, In)N material on the template to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article. The free-standing (Al, Ga, In)N article produced by such method is of superior morphological character, and suitable for use as a substrate, e.g., for fabrication of microelectronic and/or optoelectronic devices and device precursor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.