Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US6958497B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2002 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | May 16, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y20/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X<1 and 0≦Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.