Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs
US6958547B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2003 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | Aug 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Multiple level interconnect structures and methods for fabricating the interconnect structures are disclosed. The interconnect structures may contain an interconnect line, an electrolessly deposited metal layer formed over the interconnect line, a via formed over the metal layer, and a second interconnect line formed over the via. Often the metal layer contains a cobalt or nickel alloy and provides an etch stop layer for formation of an opening corresponding to the via. The metal layer may provide protection to the underlying interconnect line and may replace a traditional protective dielectric layer. The metal layer is conductive, rather than dielectric, and provides a shunt for passage of electrical current between the via and the interconnect line. Similar metal layers may also be used within the interconnect structures as via liner layers and via plugs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.