Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
US6958927B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2002 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | May 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic element that can be used in a memory array having high density includes a pinned layer, a half-metallic material layer, a spacer (or a barrier) layer and a free layer. The half-metallic material layer is formed on the pinned layer and preferably has a thickness that is less than about 100 Å. The half-metallic material layer can be formed to be a continuous layer or a discontinuous on the pinned layer. The spacer (or barrier) layer is formed on the half-metallic material layer, such that the spacer (or barrier) layer is nonmagnetic and conductive (or insulating). The free layer is formed on the spacer (or barrier) layer and has a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.