Nonvolatile semiconductor memory with X8/X16 operation mode using address control
US6958935B2 · kind B2 · utility
5Cited by
6References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2004 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | Apr 28, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/105
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a nonvolatile semiconductor memory, that is, a flash memory and especially to a NAND type flash memory device capable of selectively controlling data input/output units by an address control. In the NAND type flash memory device, a memory cell array is divided into a plurality of blocks, and a data input/output path is selectively controlled by a predetermined data rate option and introduced addresses to perform data input/output operations at a ×8 or ×16 speed in one chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.