Patent · US Expired

Multi-exposure lithography method and system providing increased overlay accuracy

US6960414B2 · kind B2 · utility

3Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 27, 2002
Grant dateNov 1, 2005
Priority date—
Expiry dateAug 1, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70466
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Multi-exposure lithography methods and systems that provide improved overlay accuracy. In one aspect of the invention, a method for multi-exposure lithography comprises determining overlay parameters corresponding to each of a plurality of sub-layouts, inputting the overlay parameters into an exposure system, exposing each sub-layout to photoresist on a wafer by using the exposure system, wherein prior to the exposure process for a given sub-layout, a correction process is performed for the sub-layout using a corresponding overlay parameter to correct an overlay of the sub-layout, and developing the exposed photoresist after exposing all of the sub-layouts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.