Method of forming a metal gate
US6960515B2 · kind B2 · utility
5Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2001 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | Jan 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal oxide layer formed by the selective oxidation process is removed by a reduction reaction or hydrogen atoms are contained in the metal oxide layer to suppress whisker nucleation and surface mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.