Shallow trench isolation process
US6960781B2 · kind B2 · utility
151Cited by
43References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2004 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | Apr 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.