Semiconductor device having a composite layer in addition to a barrier layer between copper wiring and aluminum bond pad
US6960831B2 · kind B2 · utility
14Cited by
13References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2003 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | Sep 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.