SiOCH low k surface protection layer formation by CxHy gas plasma treatment
US6962869B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2002 |
| Grant date | Nov 8, 2005 |
| Priority date | — |
| Expiry date | Oct 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of protecting a low k dielectric layer that is preferably comprised of a material containing Si, O, C, and H is described. The dielectric layer is subjected to a gas plasma that is generated from a CXHY gas which is preferably ethylene. Optionally, hydrogen may be added to the CXHY gas. Another alternative is a two step plasma process involving a first plasma treatment of CXHY or CXHY combined with H2 and a second plasma treatment with H2. The modified dielectric layer provides improved adhesion to anti-reflective layers and to a barrier metal layer in a damascene process. The modified dielectric layer also has a low CMP rate that prevents scratch defects and an oxide recess from occurring next to the metal layer on the surface of the damascene stack. The plasma treatments are preferably done in the same chamber in which the dielectric layer is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.