Semiconductor device and method of fabricating the same
US6964893B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Apr 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A gate electrode of an n-type MIS transistor includes a first metal-containing film, which is formed in contact with a gate insulation film and has a Fermi level on a conductive band side from a substantial center of a band gap of a semiconductor substrate, and a second metal-containing film formed on the first metal-containing film and having a lower resistance than the first metal-containing film. A gate electrode of a p-type MIS transistor includes a conductive coating film, which is formed in contact with the gate insulation film and has a Fermi level on a valence band side from a substantial center of the band gap of the semiconductor substrate, and the second metal-containing film formed on the conductive coating film and having a lower resistance than the conductive coating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.