Semiconductor-based encapsulated infrared sensor and electronic device
US6965107B2 · kind B2 · utility
15Cited by
13References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2004 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Mar 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.