Light-emitting element
US6965126B2 · kind B2 · utility
6Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 12, 2002 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Jun 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/851
Abstract
In a light-emitting element in which an n-type layer of a Group III nitride compound semiconductor, a light-emitting layer of a Group III nitride compound semiconductor and a p-type layer of a Group III nitride compound semiconductor are laminated successively on a substrate, a semiconductor layer of ZnxCd1−xSySe1−y (0≦x≦1, 0≦y≦1) which receives a part of blue light from the light-emitting layer to thereby emit yellow light, is interposed between the n-type Group III nitride compound semiconductor layer and the light-emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.