Structure and method for fabricating semiconductor microresonator devices
US6965128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2003 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Aug 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/08
Abstract
High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate. Portions or an entirety of the microresonator device can also overly the accommodating buffer layer, or the monocrystalline material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.