Magnetic memory device and method of manufacturing the same
US6965138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2003 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Nov 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.