Semiconductor device which is low in power and high in speed and is highly integrated
US6965533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2005 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Jan 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A write operation of a MRAM in which a current necessary for inverting magnetization of an MTJ element has to be passed through a data line and therefore current consumption is large. The write operation comprises: comparing input data DI with read data GO read from a memory cell array and encoding the input data DI to form write data GI by a data encoder WC; and decoding the read data GO by a data decoder RD to form output data DO. In a nonvolatile semiconductor memory in which the current is passed through the data line to write data into a memory cell, the number of bits to be written during the write operation is reduced, and the current consumption can be reduced. This can realize the MRAM including a low-power highly-integrated memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.